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HWL26NPB
L-Band GaAs Power FET
Autumn 2002 V1
Features
* *
Plastic Packaged GaAs Power FET Suitable for Commercial Wireless Applications High Efficiency 3V to 6V Operation
Outline Dimensions
* *
1 Pin 1: Source Pin 2: Gate Pin 3: Drain
Description
The HWL26NPB is a medium Power GaAs FET using surface mount type plastic package for various L-Band applications. It is suitable for various 900 MHz, 1900 MHz cellular/wireless applications.
2
3
PB Package (SOT-23)
Absolute Maximum Ratings
VDS VGS ID IG TCH TSTG PT Drain to Source Voltage Gate to Source Voltage Drain Current Gate Current Channel Temperature Storage Temperature Power Dissipation +7V -5V IDSS 1mA 150C -65 to +150C 0.7 W
Electrical Specifications (TA=25C) f=1900 MHz for all RF Tests
Symbol IDSS VP Parameters & Conditions Saturated Current at VDS=5V, VGS=0V Pinch-off Voltage at VDS=5V, ID=11mA Transconductance at VDS=5V, ID=110mA Thermal Resistance Power Output at Test Points VDS=3V, ID=0.5IDSS VDS=5V, ID=0.5IDSS Gain at 1dB Compression Point VDS=3V, ID=0.5IDSS VDS=5V, ID=0.5IDSS Power-Added Efficiency (POUT = P1dB) VDS=3V, ID=0.5IDSS VDS=5V, ID=0.5IDSS Units mA V mS C/W dBm Min. 150 -3.5 21.0 23.0 9.0 10.0 Typ. 220 -2.0 120 100 21.5 24.5 10.0 11.0 40.0 45.0 Max. -1.5 -
gm
Rth P1dB
G1dB
dB
PAE
%
Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL 886-3-578-5100 FAX 886-3-577-0512 http://www.hw.com.tw Email: sales@hw.com.tw All specifications are subject to change without notice.
HWL26NPB
L-Band GaAs Power FET
Autumn 2002 V1
Typical Performance at 25C
Output Power & Efficiency vs Vds @ f=0.9GHz,Ids=110mA
Po (dBm) 30 25 20 15 10 5 0 1 2 3 4 5 6 PAE (%) 60 50 40 30 20 10 0 Vds (V) Po PAE
Output Power & Efficiency vs Vds @ f=1.9GHz,Ids=110mA
Po (dBm) 30 25 20 15 10 5 0 1 2 3 4 5 6 PAE (%) 60 50 40 30 20 10 0 Vds (V) Po PAE
Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL 886-3-578-5100 FAX 886-3-577-0512 http://www.hw.com.tw Email: sales@hw.com.tw All specifications are subject to change without notice.
HWL26NPB
L-Band GaAs Power FET
Autumn 2002 V1
Output Power & Efficiency & Gain vs Input Power @ f=0.9GHz, Vds=3V
Po (dBm) 25 20 15 30 Gain 10 5 0 -8 -4 0 4 8 12 20 10 0 Pin (dBm) PAE (%) 60 50 40 Po Gain Eff
Output Power & Efficiency & Gain vs Input Power @ f=1.9GHz, Vds=3V
Po (dBm) 25 20 15 30 Gain 10 5 0 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 20 10 0 Pin (dBm) PAE (%) 60 50 40 Po Gain Eff
Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL 886-3-578-5100 FAX 886-3-577-0512 http://www.hw.com.tw Email: sales@hw.com.tw All specifications are subject to change without notice.
HWL26NPB
L-Band GaAs Power FET
Autumn 2002 V1
Output Power & Efficiency & Gain vs Input Power @ f=0.9GHz, Vds=5V
Po (dBm) 25 20 15 30 10 Gain 5 0 -8 -6 -4 -2 0 2 4 6 8 10 20 10 0 Pin (dBm) PAE (%) 60 50 40 Po Gain Eff
Output Power & Efficiency & Gain vs Input Power @ f=1.9GHz, Vds=5V
Po (dBm) 30 25 20 15 Gain 10 5 0 0 2 4 6 8 10 12 14 16 18 20 10 0 Pin (dBm) PAE (%) 60 50 40 30 Po Gain Eff
Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL 886-3-578-5100 FAX 886-3-577-0512 http://www.hw.com.tw Email: sales@hw.com.tw All specifications are subject to change without notice.
HWL26NPB
L-Band GaAs Power FET
Autumn 2002 V1
Output Power & Efficiency & Gain vs Frequency @ Vds=3V, Ids=110mA
Po (dBm) 25 20 15 Gain 10 5 0 0.7 0.8 0.9 1.0 1.1 30 20 10 0 f (GHz) PAE (%) 60 50 40 Po Gain PAE
Output Power & Efficiency & Gain vs Frequency @ Vds=5V, Ids=110mA
Po (dBm) 30 25 20 15 Gain 10 5 0 1.6 1.7 1.8 1.9 2.0 2.1 PAE (%) 60 50 40 30 20 10 0 f (GHz) Po Gain PAE
Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL 886-3-578-5100 FAX 886-3-577-0512 http://www.hw.com.tw Email: sales@hw.com.tw All specifications are subject to change without notice.
HWL26NPB
L-Band GaAs Power FET
Autumn 2002 V1
Power Derating Curve
1
Total Power Dissipation,PT (W)
(25,0.7)
(150,0) 0 0 50 100 150 225
Case Temperature,TC ()
Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL 886-3-578-5100 FAX 886-3-577-0512 http://www.hw.com.tw Email: sales@hw.com.tw All specifications are subject to change without notice.
HWL26NPB
L-Band GaAs Power FET
Autumn 2002 V1
Small Signal Common Source Scattering Parameters
S-MAGN AND ANGLES VDS=3V, IDS=0.5IDSS (GHz) lS11l ANG
0.70 0.80 0.90 1.00 1.10 1.20 1.30 1.40 1.50 1.60 1.70 1.80 1.90 2.00 2.10 2.20 2.30 2.40 2.50 2.60 2.70 2.80 2.90 3.00 0.852 0.838 0.792 0.771 0.737 0.709 0.680 0.655 0.634 0.610 0.594 0.577 0.563 0.550 0.539 0.530 0.518 0.512 0.502 0.498 0.493 0.489 0.484 0.476 -45.16 -50.62 -57.11 -62.51 -68.57 -74.22 -79.64 -84.94 -90.22 -95.29 -100.33 -105.26 -109.91 -114.47 -118.36 -122.86 -126.15 -129.86 -133.25 -136.45 -139.43 -142.25 -145.43 -148.68
lS21l
6.569 6.407 6.197 5.979 5.765 5.553 5.332 5.160 4.944 4.788 4.590 4.411 4.251 4.091 3.956 3.863 3.734 3.607 3.498 3.414 3.316 3.227 3.125 3.054
ANG
139.76 135.18 130.67 125.61 121.30 117.28 113.10 109.33 105.60 102.08 98.84 95.45 92.34 89.24 87.04 84.19 81.65 79.03 76.52 74.44 71.73 69.73 67.19 65.02
lS12l
0.034 0.038 0.043 0.046 0.051 0.055 0.059 0.063 0.067 0.070 0.074 0.079 0.083 0.085 0.087 0.091 0.095 0.100 0.100 0.103 0.108 0.113 0.117 0.117
ANG
78.69 77.75 76.01 75.65 74.78 73.97 73.15 72.08 71.52 70.86 69.88 68.43 68.26 66.88 67.25 66.75 66.03 65.10 65.41 65.37 63.76 63.88 63.15 63.33
lS22l
0.365 0.366 0.361 0.343 0.340 0.327 0.314 0.313 0.295 0.291 0.277 0.269 0.259 0.255 0.264 0.248 0.245 0.236 0.248 0.249 0.233 0.235 0.223 0.246
ANG
-7.33 -10.69 -10.33 -13.91 -14.06 -14.50 -16.26 -16.89 -18.69 -20.05 -21.10 -22.33 -23.24 -25.65 -26.72 -27.74 -28.92 -30.17 -31.31 -33.33 -34.51 -36.37 -37.89 -38.91
S-MAGN AND ANGLES VDS=5V, IDS=0.5IDSS (GHz) lS11l ANG
0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 2.0 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3.0 0.825 0.769 0.729 0.687 0.654 0.618 0.580 0.553 0.513 0.488 0.455 0.430 0.405 0.381 0.357 0.336 0.313 0.294 0.274 0.258 0.243 0.231 0.218 0.207 -42.252 -47.655 -52.237 -56.789 -61.609 -66.532 -70.139 -73.857 -78.045 -81.656 -84.840 -89.067 -92.816 -96.275 -99.787 -103.803 -107.867 -112.058 -116.074 -120.528 -125.779 -130.737 -136.317 -142.442
lS21l
6.263 5.963 5.737 5.502 5.246 5.018 4.813 4.626 4.436 4.270 4.102 3.955 3.822 3.702 3.566 3.457 3.348 3.250 3.151 3.059 2.976 2.897 2.825 2.753
ANG
133.606 128.049 122.885 117.922 113.612 108.590 104.780 100.689 96.782 92.983 89.628 86.122 82.645 79.500 76.269 73.178 70.291 67.164 64.479 61.696 58.966 56.260 53.532 51.009
lS12l
0.039 0.044 0.050 0.055 0.060 0.066 0.072 0.077 0.082 0.089 0.095 0.099 0.105 0.111 0.117 0.123 0.128 0.135 0.140 0.146 0.152 0.159 0.164 0.170
ANG
81.786 81.199 80.755 77.832 77.832 75.990 75.660 73.599 73.032 71.453 70.808 69.222 67.634 66.740 65.899 64.208 63.071 61.964 60.489 59.346 58.126 56.710 55.492 54.069
lS22l
0.419 0.424 0.426 0.423 0.421 0.403 0.412 0.401 0.404 0.395 0.394 0.387 0.384 0.378 0.371 0.367 0.359 0.357 0.348 0.346 0.336 0.332 0.327 0.317
ANG
-7.727 -6.680 -9.362 -11.601 -9.403 -11.206 -11.638 -13.466 -14.595 -16.103 -16.862 -17.974 -19.888 -21.572 -22.786 -24.877 -26.341 -27.997 -29.149 -30.774 -32.702 -34.200 -35.797 -37.416
Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL 886-3-578-5100 FAX 886-3-577-0512 http://www.hw.com.tw Email: sales@hw.com.tw All specifications are subject to change without notice.

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